Quantum Confinement
Associate Professor Ewa M. GoldysApril 2001
| This research concentrated on these quantum confinement
effects which are relevant for electronic and optoelectronic devices.
Dr Graeme Nott (BTech Opto) made important contributions to research on SEED devices. He is now with Herriott-Watt University in Edinburgh. In his PhD he studied selected device aspects of GaAs/AlGaAs multiple quantum well structures Modelling work revolved around the design of electro-absorption microcavities and investigating the associated material properties, such as refractive index. |
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Devices being investigated utilise both standard and non-standard bandedge profiles and are being used as transmission and reflection irradiance modulators. Individual modulators are being combined into the common self electro-optic effect device (SEED) configuration for implementation of logical functions. The operation of symmetric SEED's is being investigated for application to optical oversampled analog-to-digital conversion applications.
Selected publications include:
1.
"Signatures of excitonic dark states in
time-resolved coherent response of a microcavity",
E.M. Goldys, G.C. La Rocca, F.
Bassani, Phys. Rev. B
61, 10 346 - 10 360, (2000)
2.
"Optical-phonon modes and electron-phonon interaction in arbitrary
semiconductor planar microcavities" Jun-jie Shi, B.C. Sanders, Shao-hua
Pan, E.M. Goldys, Phys Rev. B
60, 16031-8, (1999).
3.
Jun-jie Shi, B.C. Sanders, Shao-hua Pan, and
E.M. Goldys"Optical waves in a semiconductor planar
microcavity"phys. stat. sol. b, 215,
p. 1157-63 (1999).
4.
"Intersubband Optical Absorption in Strained Double Barrier Quantum
Well Infrared Photodetectors" , Jun-jie Shi and
E.M. Goldys, IEEE
Transactions on Electron Devices, vol 46 no 1, p 83-8. (1999)
5.
"Inter-island energy transfer and in-plane exciton migration in
AlGaAs/GaAs quantum wells detected by exciton dynamics" , M. Godlewski,
P.O. Holz, J.P. Bergman, B. Monemar, K. Reginski, M. Bugajski,
E.M. Goldys, T.L. Tansley,
Superlattices and Microstructures, vol 23, p.107-11 (1998).
6.
"Band offsets in In_0.15Ga0.85As/GaAs and in In0.15Ga
_0.85As/Al_0.15Ga0.85As studied by photoluminescence and cathodoluminescence",
E.M. Goldys, H.Y. Zuo, M.R. Phillips, C.M. Contessa,
T.L. Tansley, Superlattices and Microstructures vol 23, no 6, p. 1223-6,
(1998).
7.
"Operation and Theoretical Analysis of the Multiple Asymmetric
Coupled Quantum Well Light Modulator in the n-i-n Configuration",
E.M. Goldys, G. Nott, T.L. Tansley, M. Henini, M.A. Pate, G. Hill,
Journal of Quantum Electronics vol
33 no 7 p 1084-8 (1997).
8.
"Type I and type II
Alignment of the Light Hole Band in In_0.15Ga_0.85As/GaAs and in
In_0.15Ga_0.85As/Al_0.15Ga_0.85As Strained Quantum Wells" E.M. Goldys, H.Y.
Zuo,M.R. Phillips, C.M. Contessa, M.R. Vaughan, T.L. Tansley,
Journal of Electronic Materials, 28,
no 8, 922-927. (1997).
9.
"Photoreflectance of AlxGa1-xAs/GaAs and GaAs/GaAs
Interfaces at High Powers",
E.M. Goldys, A. Mitchell, T.L. Tansley, R.J. Egan and A. Clark, Optics
Communications, vol 124, no 3-4 p. 392-9, (1996).
10.
"The Current-Voltage Nonlinearity in the Multiple Quantum Well n-i-n
Modulator Structure E.M. Goldys,
G.Nott, T.L. Tansley, M. Henini, M.A. Pate, G. Hill, Electronics Letters,
vol. 31 no 23 p. 2040-1, (1995).
11.
"Bound and Continuum Hole States in Semiconductor Quantum-well
Structures with Arbitrary Potential Profiles", V.I. Galiev,
E.M. Goldys, A.N. Kruglov, M.G. Novak, A.F. Polupanov, T.L. Tansley,
International Journal of Physics of Low-dimensional Structures
12 , 317 (1995).
12.
"Exact Hole-Bound State Calculations for Semiconductor Quantum Wells
with Arbitrary Potential Profiles", V.I. Galiev, E.M. Goldys, M.G. Novak,
A.F. Polupanov, T.L. Tansley,
Superlattices and Microstructures , vol. 17, p. 421-9, (1995).
13.
"Quantum Confined Light Modulators",E.M. Goldys and
T.L. Tansley, Microelectronics Journal, vol 25. no 8, p.697-712 (1994)
(invited review paper).
14.
"Electronic Band Structure of AlxGa1-xAs /AlyGa1-yAs/GaAs Double
Barrier Superlattices", T. Osotchan, V.W.L. Chin, M.R. Vaughan, T.L.
Tansley, E.M. Goldys, Phys. Rev B.
vol. 50, no 4, p. 2409-19, (1994).
15.
"Photoluminescence Excitation Interpreted by Photon Recycling in
GaAs/GaAlAs Multiple Quantum Well Structure",
E.M. Goldys, V.W.L. Chin,
T.L. Tansley, M.R. Vaughan, Journal of Applied Physics, vol.75, no.8, p.
4194-200, (1994).
16.
"High Field Photoluminescence in GaAs Single Heterojunctions:
Mapping of an Optically Determined Phase Boundary Correlated with the Electron
Liquid-Solid Transition", A.G. Davies, S.A. Brown,
R.B. Dunford, E.M. Goldys,
R. Newbury, R.G. Clark, P.E.
Simmonds, J.J. Harris, C.T. Foxon, Physica B, vol.184, no.1-4, p. 56-65, (1993).
17.
"Magneto-photoluminescence Studies of a 2D Electron System:
Signatures of the Fractional Quantum Hall Effect and Wigner Solid",
S.A. Brown, A.G. Davies, R.B. Dunford, E.M. Goldys, R. Newbury, R.G.
Clark, P.E. Simmonds, J.J. Harris, C.T. Foxon, Superlattices and
Microstructures, vol.12, no.4, p. 433-42, (1992).
18.
"Magneto-optical Probe of Two-dimensional Electron Liquid and Solid
Phases", E.M. Goldys, S.A. Brown, R.G. Dunford, A.G. Davies, R. Newbury,
R.G. Clark, P.E. Simmonds, J.J. Harris, C.T. Foxon, Physical Review B (Rapid
Communications), vol.46, no.12, p. 7957-60, (1992).
19.
"Improving performance of resonant tunneling devices in asymmetric
structures", Jun-jie Shi, B.C.
Sanders, Shao-hua Pan, E.M. Goldys, accepted in Physica E.
20.
"Excitons in quantum-dot quantum well nanoparticles", Jun-jie
Shi and E.M. Goldys, submitted to
physica status solidi b.
21.
"Accurate modelling of absorption and
refractive in a GaAs/GaAlAs quantum well", G.J. Nott,
E.M. Goldys, COMMAD 1998,
14-16 December 1998, Perth page 526-529.
22.
V.I. Galiev, E.M. Goldys,
A.N. Kruglov, A.F. Polupanov, T.L. Tansley,
"Realistic continuum hole states in Si-SiGe quantum wells",
Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD96
8-11 Dec. 1996 Canberra, p. 333, (1997).
23.
A. Mitchell, E.M. Goldys,
M.W. Austin and G.J. Nott "Design
of Quantum Well Materials for Maximum Change in Refractive Index in Electric
Field with Minimal Loss", Conference
on Optoelectronic and Microelectronic Materials and Devices, COMMAD96 8-11 Dec.
1996 Canberra, p.83, (1997).
24.
G.J. Nott, E.M. Goldys, K.J.
Grant, ''Simulation of Optical Oversampled Analog-to Digital Conversion Using
Self-Electrooptic Effect Devices'', International
Quantum Electronics Conference, 1996 OSA Technical Digest Series (Optical
Society of America, Washington, D.C., 1996, pp 100-101 (1997).
25.
"Effect of Component Nonidealities on Optical Oversampled Analog to
Digital Converter Resolution", G.J. Nott, K.J.
Grant, E.M. Goldys,
Proceedings, Fourth International
Symposium on Signal Processing and its Applications, (ISSPA96), Gold Coast,
Australia, 26-28 August 1996, vol 2, p. 853, (1997).
26.
E.M. Goldys, G. Nott, T.L. Tansley, M. Henini, M.A. Pate, G. Hill,
"Quantum Confined Stark Effect in Coupled Quantum Wells and its
Application for Light Modulation", Proceedings of Australian Compound
Optoelectronic Materials and Devices Conference (COMAD), Sydney, 12-14 December
1994, p. 111-115.
27.
"Magneto-optics as a Probe of the Cross-over from the Fractional QHE
to the Electron Solid Regime",
S.A. Brown, E.M. Goldys, R.B. Dunford, A.G. Davies, R. Newbury, R.G. Clark, P.E.
Simmonds, J.J. Harris, C.T. Foxon, 21th
International Conference on the Physics of Semiconductors, Beijing, China, p.
931, 10 - 14
August, (1992).
28.
G.J. Nott, E.M. Goldys, K.J. Grant,
''Simulation of Optical Oversampled Analog-to Digital Conversion Using Self-Electrooptic
Effect Devices'', International
Quantum Electronics Conference, 1996 OSA Technical Digest Series Optical Society
of America, Washington, D.C., 1996, pp 100-101
29.
C. Contessa, E.M. Goldys, M. Philips, M. Vaughan, "Cathodoluminescence
Study of Strained AlGaAs /InGaAs and GaAs/InGaAs Quantum Wells", Australian
Compound Optoelectronic Materials and Devices Conference (COMAD), Sydney, 12-14
December (1994).
30.
M. Godlewski, E.M. Goldys, M.R. Phillips, R. Langer, A. Barski, "
In-plane and In-depth Properties of GaN Epilayers and GaN/AlGaN Quantum Well
Structures Studied with Scanning and Depth-profiling Cathodoluminescence",
Third International Conference on Nitride Semiconductors, Montpellier'99 (July
4-9, 1999), Montpellier, France.
31.
A.F.Polupanov, V.I. Galiev, A.N. Kruglov,
E.M. Goldys, T.L.Tansley "Scattering of holes by quantum-well
heterostructure", Proceedings of the International Symposium:
Nanostructures 97: Physics and Technology, St.Petersburg 23-27 June 1997, pp.
118-121